SS22 thru ss26 vishay general semiconductor document number: 88748 revision: 23-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214aa (smb) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 2.0 a v rrm 20 v to 60 v i fsm 75 a v f 0.50 v, 0.70 v t j max. 125 c, 150 c do-214aa (smb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol SS22 ss23 ss24 ss25 ss26 unit device marking code s2 s3 s4 s5 s6 maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v max. average forward rectified current at t l (fig. 1) i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 75 a non-repetitive avalanche energy at t a = 25 c, i as = 2.0 a, l = 10 mh e as 20 mj electrostatic dischar ge capacitor voltage human body model: c = 100 pf, r = 1.5 k vc 8.0 kv voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 125 - 65 to + 150 c storage temperature range t stg - 65 to + 150 c
SS22 thru ss26 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88748 revision: 23-jan-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) p.c.b. mounted with 0.55 x 0.55" (14 x 14 mm) copper pad areas note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol SS22 ss23 ss24 ss25 ss26 unit maximum instantaneous forward voltage (1) 2.0 a v f 0.5 0.7 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c t a = 100 c i r 0.4 10 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol SS22 ss23 ss24 ss25 ss26 unit typical thermal resistance (1) r ja r jl 75 17 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss24-e3/52t 0.096 52t 750 7" diam eter plastic tape and reel ss24-e3/5bt 0.096 5bt 3200 13" di ameter plastic tape and reel ss24he3/52t (1) 0.096 52t 750 7" diameter plastic tape and reel ss24he3/5bt (1) 0.096 5bt 3200 13" diameter plastic tape and reel figure 1. forward current derating curve 50 70 90 110 130 150 0 0.5 1.0 1.5 2.0 p.c.b. mo u nted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas resisti v e or ind u cti v e load SS22 - ss24 ss25 & ss26 lead temperat u re (c) a v erage for w ard c u rrent (a) 170 figure 2. maximum non-repetitive surge current 1 10 100 0 20 40 60 8 0 100 at rated t l 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
SS22 thru ss26 vishay general semiconductor document number: 88748 revision: 23-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reverse current characteristics 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 t j = 150 c t j = 125 c t j = 25 c SS22 - ss24 ss25 & ss26 p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.001 0.01 0.1 1 10 100 SS22 - ss24 ss25 & ss26 t a = 125 c t a = 25 c t a = 75 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) figure 5. typical junction capacitance 10 100 1000 0.1 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p SS22 - ss24 ss25 & ss26 re v erse v oltage ( v ) j u nction capaci tance (pf) 0.1 8 0 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.0 8 6 (2.20) 0.077 (1.95) 0.096 (2.44) 0.0 8 4 (2.13) do-214aa (smb) 0 (0) cathode band 0.0 8 5 max. (2.159 max.) 0.220 ref 0.0 8 6 mi n . (2.1 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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